Dual charge integrating amplifier circuit using two GaInAs-InP pin photodiodes for ultraweak light detection in the near infrared region

by: M Makiuchi, J Miyazaki, T Shiraishi, K Kakinuma, H Inaba

Photonics Technology Letters, IEEE, Vol. 9, No. 11. (1997), pp. 1514-1516.

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A novel detection system based on a dual charge integrating amplifier (dual-CIA) circuit that employs two GaInAs-InP pin photodiodes, has been developed for the detection of the ultraweak, near-infrared light generated by chemical and biochemical reactions. The minimum detectable power was measured to be as low as 0.9/spl times/10/sup -15/ W. Using this system, we were able to detect the ultraweak light (around 1268 nm), emitted from singlet oxygen molecules during the chemical reaction between OCl/sup -/ and H/sub 2/O/sub 2/, for a given H/sub 2/O/sub 2/ concentration that is far lower than those reported previously.

@article{citeulike:1567392, abstract = {A novel detection system based on a dual charge integrating amplifier (dual-CIA) circuit that employs two GaInAs-InP pin photodiodes, has been developed for the detection of the ultraweak, near-infrared light generated by chemical and biochemical reactions. The minimum detectable power was measured to be as low as 0.9/spl times/10/sup -15/ W. Using this system, we were able to detect the ultraweak light (around 1268 nm), emitted from singlet oxygen molecules during the chemical reaction between OCl/sup -/ and H/sub 2/O/sub 2/, for a given H/sub 2/O/sub 2/ concentration that is far lower than those reported previously.}, author = {Makiuchi, M. and Miyazaki, J. and Shiraishi, T. and Kakinuma, K. and Inaba, H. }, booktitle = {Photonics Technology Letters, IEEE}, citeulike-article-id = {1567392}, journal = {Photonics Technology Letters, IEEE}, keywords = {amplifier, charge, circuits, detection, dual, near-infrared, nir, optical, photodiodes}, number = {11}, pages = {1514--1516}, posted-at = {2007-08-15 17:17:35}, priority = {2}, title = {Dual charge integrating amplifier circuit using two GaInAs-InP pin photodiodes for ultraweak light detection in the near infrared region}, url = {http://ieeexplore.ieee.org/xpls/abs\_all.jsp?arnumber=634726}, volume = {9}, year = {1997} }

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TY - JOUR ID - citeulike:1567392 L3 - citeulike-article-id:1567392 TI - Dual charge integrating amplifier circuit using two GaInAs-InP pin photodiodes for ultraweak light detection in the near infrared region T2 - Photonics Technology Letters, IEEE JF - Photonics Technology Letters, IEEE VL - 9 IS - 11 SP - 1514 EP - 1516 N2 - A novel detection system based on a dual charge integrating amplifier (dual-CIA) circuit that employs two GaInAs-InP pin photodiodes, has been developed for the detection of the ultraweak, near-infrared light generated by chemical and biochemical reactions. The minimum detectable power was measured to be as low as 0.9/spl times/10/sup -15/ W. Using this system, we were able to detect the ultraweak light (around 1268 nm), emitted from singlet oxygen molecules during the chemical reaction between OCl/sup -/ and H/sub 2/O/sub 2/, for a given H/sub 2/O/sub 2/ concentration that is far lower than those reported previously. KW - amplifier KW - charge KW - circuits KW - detection KW - dual KW - near-infrared KW - nir KW - optical KW - photodiodes AU - Makiuchi, M AU - Miyazaki, J AU - Shiraishi, T AU - Kakinuma, K AU - Inaba, H PY - 1997/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=634726 ER -

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