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Taggat som: etching [57 articles]

Senaste hänvisningarna som insorterats under taggen etching.
  • notes Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2]
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041.
    by Gottlieb S Oehrlein, Lennart J Lindstom
    posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as read along with 1 group LTM_LETI_etching
  • Thin gate oxide behavior during plasma patterning of silicon gates
    Applied Physics Letters, Vol. 75, No. 8. (1999), pp. 1069-1070.
    by L Vallier, L Desvoivres, M Bonvalot, O Joubert
    posted to etching oxidation recess silicon by these_morel on 2008-01-03 13:49:54 as read along with 1 group LTM_LETI_etching
  • notes Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2]
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572.
    by WM Greene, DW Hess, WG Oldham
    posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as read along with 1 group LTM_LETI_etching
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as read
  • Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices
    Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 286-288.
    by A Katz, SJ Pearton, M Geva
    posted to tungsten etching ecr by these_morel on 2008-08-20 12:58:34 as **
  • Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas
    Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530.
    by G Cunge, M Kogelschatz, N Sadeghi
    posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as read
  • Highly anisotropic etching of submicrometer features on tungsten
    Journal of Applied Physics, Vol. 78, No. 11. (1995), pp. 6780-6783.
    by F Bounasri, E Gat, M Chaker, M Moisan, J Margot, MF Ravet
    posted to tungsten magnetoplasma etching by these_morel on 2008-08-20 12:56:04 as **
  • Dry etching of titanium nitride thin films in CF[sub 4]--O[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, No. 2. (1995), pp. 335-342.
    by F Fracassi, R D'agostino, R Lamendola, I Mangieri
    posted to cf4-o2 etching titane_nitride xps by these_morel on 2006-12-13 15:42:58 as read along with 1 group LTM_LETI_etching
  • Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products
    Plasma Chemistry and Plasma Processing, Vol. 5, No. 4. (1 December 1985), pp. 333-351.
    by A Picard, G Turban
    posted to etching mass-spectrometry molybdenum sf6-o2 tungsten by these_morel on 2007-03-30 15:41:30 as read along with 1 group LTM_LETI_etching
  • notes The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
    Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150.
    by HC Lee, S Vanhaelemeersch
    posted to cl2 etching masking-materials sf6-ar tungsten by these_morel on 2006-06-19 09:39:31 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to xps plasma hfo2 fluorocarbon etching by these_morel on 2006-12-13 15:40:29 as read along with 1 group LTM_LETI_etching
  • notes A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • notes Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443.
    by Kazuo Takahashi, Kouichi Ono
    posted to xps plasmas hfo2 fluorocarbon etching by these_morel on 2006-12-13 15:38:19 as read along with 1 group LTM_LETI_etching
  • notes Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
    Vol. 23, No. 4. (2005), pp. 964-970.
    by Wan S Hwang, Jinghao Chen, Won J Yoo, Vladimir Bliznetsov
    posted to volatility tin tan optical-emission-spectroscopy nitrogen icp hfn hbr-cl2-o2 etching by these_morel on 2006-02-17 15:42:40 as read along with 1 group LTM_LETI_etching
  • Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778.
    by A Le Gouil, O Joubert, G Cunge, T Chevolleau, L Vallier, B Chenevier, I Matko
    posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as read
  • Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
    Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79.
    by Mutumi Tuda, Kenji Shintani, Junji Tanimura
    posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as read along with 1 group LTM_LETI_etching
  • notes Effect of hydrogen peroxide on hydrofluoric acid etching of high-k materials: ESR investigations
    Journal of Non-Crystalline Solids, Vol. 351, No. 18. (15 June 2005), pp. 1559-1564.
    by V Lowalekar, S Raghavan
    posted to dielectric etching high-k materials by these_morel on 2006-02-17 15:36:47 as read along with 1 group LTM_LETI_etching
  • notes Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917.
    by Sung K Kwon, Kyung N Kim, Chul W Nam, Seong I Woo
    posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as read along with 1 group LTM_LETI_etching
  • Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2205-2211.
    by SA Vitale, BA Smith
    posted to etching oxidation recess silicon by these_morel on 2007-12-20 14:56:17 as read along with 1 group LTM_LETI_etching
  • notes Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553.
    by C Wang, VM Donnelly
    posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as read along with 1 group LTM_LETI_etching
  • Anisotropic dry etching of submicron W features using a Ti mask
    Semiconductor Science and Technology, Vol. 7, No. 12. (1992), pp. 1489-1494.
    by TR Fullowan, SJ Pearton, F Ren, GE Mahoney, RL Kostelak
    posted to cf4 etching sf6 tungsten by these_morel on 2006-12-14 14:09:51 as read along with 1 group LTM_LETI_etching
  • notes Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs
    Electron Devices, IEEE Transactions on, Vol. 51, No. 12. (2004), pp. 1989-1996.
    by Daewon Ha, H Takeuchi, Yang-Kyu Choi, Tsu-Jae King
    posted to cl2-o2 etching molybdenum tcp_9400 by these_morel on 2006-03-17 15:12:21 as read along with 1 group LTM_LETI_etching
  • Effects of Nitrogen Additive Gas on Sidewall Passivation in W/TiN/High-k Dielectric Gate Etching
    Microprocesses and Nanotechnology Conference, 2000 International (2000), pp. 210-211.
    by Jae-Young Kim, Yu-Kwon Kim, Kwang-Ok Kim, Chang J Choi, Jin W Kim
    posted to dielectric etching gate high-k metal tin tungsten by these_morel on 2006-02-17 13:47:00 as read along with 1 group LTM_LETI_etching
  • Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40.
    by M Helot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, P Mangiagalli, T Lill
    posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as ** along with 1 group LTM_LETI_etching
  • Plasma etching selectivity of ZrO[sub 2] to Si in BCl[sub 3]/Cl[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, No. 6. (2003), pp. 1915-1922.
    by Lin Sha, Jane P Chang
    posted to bcl3 cl2 etching high-k zro2 by these_morel on 2006-02-21 09:40:20 as ** along with 1 group LTM_LETI_etching
  • notes 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to c4f8 etching icp sf6 tungsten by these_morel on 2006-07-26 12:51:56 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • notes Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148.
    by G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
    posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as read along with 1 group LTM_LETI_etching
  • notes Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221.
    by Gowri P Kota, JW Coburn, David B Graves
    posted to cl2 etching molecular-beam-system poly-si wsi by these_morel on 2006-02-28 15:06:32 as read along with 1 group LTM_LETI_etching
  • notes Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042.
    by Masaaki Sato, Yoshinobu Arita
    posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as read along with 1 group LTM_LETI_etching
  • notes Study of W/Ti triode plasma etching
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, No. 5. (1992), pp. 3076-3085.
    by JF Coulon, G Turban, P Rabinzohn, L Jeannerot
    posted to etching plasmas sf6-n2 sicl4-cl2 titanium tungsten by these_morel on 2006-02-28 15:02:41 as read along with 1 group LTM_LETI_etching
  • notes Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191.
    by SC Mcnevin
    posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as read along with 1 group LTM_LETI_etching
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to plasma introduction etching by these_morel on 2008-07-09 10:18:03 as **
  • notes Anisotropic etching of silicon in TMAH solutions
    Sensors and Actuators A: Physical, Vol. 34, No. 1. (July 1992), pp. 51-57.
    by Osamu Tabata, Ryouji Asahi, Hirofumi Funabashi, Keiichi Shimaoka, Susumu Sugiyama
    posted to etching by skirnir on 2008-08-28 13:15:45 as **
  • notes Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications
    Microelectronic Engineering, Vol. 77, No. 3-4. (April 2005), pp. 230-241.
    by Kalpathy B Sundaram, Arun Vijayakumar, Ganesh Subramanian
    posted to etching by skirnir on 2008-08-28 13:12:32 as **
  • notes A three-dimensional MOS transistor formation technique with crystallographic orientation-dependent TMAH etchant
    Sensors and Actuators A: Physical, Vol. 111, No. 2-3. (15 March 2004), pp. 310-316.
    by Hideo Sunami, Tomoyasu Furukawa, Taiyo Masuda
    posted to etching by skirnir on 2008-08-28 14:25:55 as **
  • Generation of Nanostructures by Scanning Near-Field Photolithography of Self-Assembled Monolayers and Wet Chemical Etching
    Nano Lett., Vol. 2, No. 11. (13 November 2002), pp. 1223-1227.
    by S Sun, GJ Leggett
    posted to 1 etching patterning photochemistry by sjanusz on 2007-09-10 08:22:18 as **
  • Coexistence of Multiple Conformations in Cysteamine Monolayers on Au(111)
    J. Phys. Chem. B, Vol. 109, No. 32. (18 August 2005), pp. 15355-15367.
    by J Zhang, A Bilic, JR Reimers, NS Hush, J Ulstrup
    posted to 1 au_pits etching by sjanusz on 2007-09-24 16:25:59 as read
  • Gold Film Surface Preparation for Self-Assembled Monolayer Studies
    Langmuir, Vol. 23, No. 2. (16 January 2007), pp. 509-516.
    by J Kang, PA Rowntree
    posted to etching piranha_regeneration surface_preparation by sjanusz on 2007-06-27 20:26:45 as read
  • Tuning photonic crystal nanocavity modes by wet chemical digital etching
    Applied Physics Letters, Vol. 87, No. 2. (2005)
    by K Hennessy, A Badolato, A Tamboli, PM Petroff, E Hu, M Atature, J Dreiser, A Imamoglu
    posted to crystal digital etching photonic tuning by rsabouni on 2006-07-22 07:10:57 as *****
  • Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol “ink” followed by chemical etching
    Applied Physics Letters, Vol. 63 (October 1993), pp. 2002-2004.
    by A Kumar, GM Whitesides
    posted to alkanethiol centimeter chemical contact elastomers etching gold ink membranes micrometer printing stamp by rodney on 2007-09-03 03:09:58 as ** along with 1 group Kopelman_Group
  • Etching of MgO crystals in acids: surface micromorphology
    Journal of Materials Science, Vol. 11, No. 12. (1 December 1976), pp. 2271-2282.
    by K Sangwal, JN Sutaria
    posted to surface oxide mgo magnesium etching acids by rodney on 2008-07-28 00:18:33 as **
  • Etchant for revealing dislocations in magnesium oxide single crystals
    Journal of Crystal Growth, Vol. 44, No. 5. (December 1978), pp. 635-637.
    by Toshio Harada
    posted to single oxide mgo magnesium etching crystals by rodney on 2008-07-28 00:16:39 as **
  • High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field
    Thin Solid Films, Vol. 435, No. 1-2. (1 July 2003), pp. 242-246.
    by DW Kim, CH Jeong, KN Kim, HY Lee, HS Kim, YJ Sung, GY Yeom
    posted to sapphire etching bcl3 by RCorbin on 2007-01-16 10:55:30 as **
  • Tungsten (W) as electrode material: Electrode potential and small-signal impedances
    Medical and Biological Engineering and Computing, Vol. 16, No. 5. (1978), pp. 483-488.
    by T Zeuthen
    posted to etching mems by msterner on 2007-06-26 11:48:55 as read
  • Etch rates for micromachining processing
    Microelectromechanical Systems, Journal of, Vol. 5, No. 4. (1996), pp. 256-269.
    by KR Williams, RS Muller
    posted to etching fabrication mems by msterner on 2007-05-08 10:28:11 as read along with 1 person kristgy
  • Dry process technology (reactive ion etching)
    Journal of Vacuum Science and Technology, Vol. 13, No. 5. (1976), pp. 1023-1029.
    by James A Bondur
    posted to dry-etching etching rie technology by mawulf on 2007-08-15 11:22:53 as ****
  • Surface modification and etch product detection during reactive ion etching of InP in - plasma
    Plasma Sources Science and Technology, Vol. 6, No. 3. (9 May 1997), pp. 334-342.
    by Y Feurprier, Ch Cardinaud, G Turban
    posted to etching rie by mawulf on 2007-07-30 10:09:42 as ****
  • The SOI planar photonic crystal fabrication: patterning of Cr using Cl2/O2 plasma etching
    Microelectronic Engineering, Vol. 77, No. 2. (February 2005), pp. 139-143.
    by AP Milenin, C Jamois, RB Wehrspohn, M Reiche
    posted to chromium electron_beam etching etch_rates lithography pmma by kristgy on 2007-10-09 20:43:19 as **
  • Transfer of continuous-relief diffractive structures into diamond by use of inductively coupled plasma dry etching
    Opt. Lett., Vol. 26, No. 22. (15 November 2001), pp. 1752-1754.
    by Mikael Karlsson, Klas Hjort, Fredrik Nikolajeff
    posted to diamond etching processing by kristgy on 2007-10-11 23:04:18 as **
  • Fabrication and evaluation of a diamond diffractive fan-out element for high power lasers
    Opt. Express, Vol. 11, No. 3. (10 February 2003), pp. 191-198.
    by Mikael Karlsson, F Nikolajeff
    posted to diamond etching optics processing by kristgy on 2007-10-11 23:01:30 as **
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